(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain.

* Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (.

Silicon Carbide N-Channel MOSFET

TW015Z65C

TW015N120C

TW015N65C

TW027N65C

TW045N120C

TW048N65C

TW050LH9CTLCM

TW-0x-xx-F-D-xxx-SM

TW-0x-xx-F-S-xxx-SM

TW-0x-xx-L-D-xxx-SM

TW-0x-xx-L-S-xxx-SM

TW-0x-xx-T-D-xxx-SM

TW-0x-xx-T-S-xxx-SM

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