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Toshiba Electronic Components Datasheet

2SC6075 Datasheet

Silicon NPN Transistor

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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
2SC6075
Power Amplifier Applications
Power Switching Applications
Unit: mm
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
160
160
80
9
2.5
5.0
1.0
1.3
150
55150
V
V
V
V
A
A
A
W
°C
°C
1 : EMITTER
2 : COLLECTOR
3 : BASE
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight:0.55g(typ)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2007-06-07


Toshiba Electronic Components Datasheet

2SC6075 Datasheet

Silicon NPN Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SC6075
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
www.DataSheet4U.com
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle 1%
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
80 ― ― V
150
180 450
100
― ― 0.3 V
― ― 0.5 V
― ― 1.5 V
150 MHZ
14 pF
0.05
0.4 μs
0.15
Marking
C6075
Part No. (or abbreviation code)
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
2 2007-06-07


Part Number 2SC6075
Description Silicon NPN Transistor
Maker Toshiba Semiconductor
PDF Download

2SC6075 Datasheet PDF






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