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2SD2353, Silicon NPN Transistor - Toshiba Semiconductor

2SD2353_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2353

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

131.62 KB

Description:

Silicon npn transistor.

2SD2353 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm * High DC current gain: hFE = 800 to 3200 * Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.6 A Collector power dissi

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Distributor
Diotec Semiconductor AG
US3G
0 In Stock
Qty : 3000 units
Unit Price : $0.18