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TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
2SK3564
unit
Switching Regulator Applications
10±0.3 φ3.2±0.2 2.7±0.2
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 TBD 3 4.0 150 -55~150 A W mJ A mJ °C °C Unit
0.69±0.15
2.8Max
V V V
2.54±0.25 0.64±0.15 2.54±0.25
1 2 3
2.6
12.5 Min. 4.5±0.2
1.1 1.1
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. 2. 3.
2SK3564 Datasheet
