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GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55 to 150 Unit V V A
Diode forward current
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Weight: 9.75 g (typ.
GT40T302 Datasheet
