| Part number | GT40T301 |
|---|---|
| Datasheet | GT40T301_ToshibaSemiconductor.pdf |
| File Size | 311.22 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
|
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD.
| Part Number | Description |
|---|---|
| GT40T302 | Silicon N-Channel IGBT |
| GT40T101 | Silicon N-Channel MOSFET |
| GT40G121 | Silicon N-Channel IGBT |
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40Q321 | Silicon N-Channel IGBT |
| GT40Q322 | Silicon N-Channel IGBT |
| GT40Q323 | Silicon N-Channel IGBT |
