GT40T301 Datasheet | Toshiba

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications Unit: mm - - - - FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = - 20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 - 55~150 Unit V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 2002-01-18 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VECF trr Rth (j-c) 15 Ω 51 Ω 15 V 0 - 15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = - 20 A/µs IGBT Diode Test Condition VGE = ±25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 m A, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min   4.0   Typ.    3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7   Max ±500 1.0 7.0 5.0   Unit n A m A V V p F          µs 600 V  2.5 3.0 0.625 1.25 V µs...