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GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55~150 Unit V V A
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Weight: 9.75 g (typ.
GT40T301 Datasheet
