GT40T302
GT40T302 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Parallel Resonance Inverter Switching Applications
Unit: mm
- -
- - FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt =
- 20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40...
