GT40T101
GT40T101 is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
HIGH POWER SWITCHING APPLICATIONS
Unit: mm l Enhancement- Mode l High Speed l Low Saturation
: tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector- Emitter Voltage Gate- Emitter Voltage
Collector Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range
DC 1ms
SYMBOL
VCES VGES
IC ICP
Tj Tstg
RATING
1500 ±25 40 80
- 55~150
UNIT V V
W °C °C
JEDEC JEITA TOSHIBA
Weight: 9.75g
― ― 2- 21F2C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current Collector Cut- off Current Gate- Emitter Cut- off Voltage Collector- Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn- On Time Fall Time
Turn- Off...
