GT40T101 Description
GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement−Mode l High Speed l Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A).
GT40T101 Key Features
- Enhancement−Mode
- High Speed
- Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta =