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GT40T101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40T101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l Enhancement−Mode l High Speed l Low Saturation
: tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range
DC 1ms
SYMBOL
VCES VGES
IC ICP
PC
Tj Tstg
RATING
1500 ±25 40 80
200
150 −55~150
UNIT V V
A
W °C °C
JEDEC JEITA TOSHIBA
Weight: 9.
GT40T101 Datasheet
