Datasheet Details
| Part number | GT50J122 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 155.17 KB |
| Description | silicon N-channel IGBT |
| Datasheet |
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| Part number | GT50J122 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 155.17 KB |
| Description | silicon N-channel IGBT |
| Datasheet |
|
|
|
|
GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.
| Part Number | Description |
|---|---|
| GT50J121 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
| GT50J325 | Silicon N-Channel IGBT |
| GT50J327 | silicon N-channel IGBT |
| GT50J328 | Silicon N-Channel IGBT |
| GT50G321 | silicon N-channel IGBT |
| GT50MR21 | silicon N-channel IGBT |
| GT50N321 | silicon N-channel IGBT |