SSM3J328R Datasheet | Toshiba

Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F 1: Gate 2: Source 3: Drain ©2021-2025 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2010-08 2025-02-20 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 VGSS ±8 Drain current (DC) (Note 1) -6.0 Drain current (pulsed) (Note 1), (Note 2) -24.0 Power dissipation (Note 3) Power dissipation t = 10 s (Note...