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SSM3J328R - Silicon P-Channel MOSFET

SSM3J328R Description

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J328R 1.Applications * Power Management Switches 2..

SSM3J328R Features

* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J328R 1: Gate 2: Source 3: Drain ©2021-

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Silicon P-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor SSM3J328R-like datasheet