SSM3J328R - Silicon P-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM3J328R
Manufacturer	Toshiba Semiconductor
File Size	416.37 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J328R Datasheet
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(1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J328R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-08 2025-02-20 Rev.2.0 SSM3J328R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.

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Published: Sep 16, 2012 |