SSM3K302T Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Power Management Switch Applications High Speed Switching Applications - - - 1.8 V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = Ron = 87mΩ (max) (@VGS = 2.5V) 71 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute .. Maximum Ratings (Ta = 25°C) Characteristic Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 3.0 6.0 700 150 - 55~150 Unit V V A mW °C °C Drain- source voltage Gate- source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage...