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SSM3K303T Datasheet

Manufacturer: Toshiba
SSM3K303T datasheet preview

Datasheet Details

Part number SSM3K303T
Datasheet SSM3K303T_ToshibaSemiconductor.pdf
File Size 234.64 KB
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
SSM3K303T page 2 SSM3K303T page 3

SSM3K303T Overview

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications 4 V drive Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.9 A 5.8 Drain power dissipation PD (Note 1) 700 mW Channel...

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