SSM3K315T - Silicon N-Channel MOSFET

Datasheet Details

Part number	SSM3K315T
Manufacturer	Toshiba Electronic Devices & Storage
File Size	248.83 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K315T Datasheet
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SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applications • 4.5-V drive • Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.0 A Pulse IDP (Note 1) 12.0 Drain power dissipation PD (Note 1) 700 mW t = 10 s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.

Published: Jul 21, 2010 |