SSM3K324R mosfet equivalent, silicon n-channel mosfet.
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS .
* Power Management Switches
* DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on.
Image gallery
Download