SSM3K336R - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K336R
Manufacturer	Toshiba Semiconductor
File Size	362.06 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K336R-ToshibaSemiconductor.pdf

(1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2025-02-20 Rev.5.0 SSM3K336R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Drain-source voltage Gate.

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Published: Sep 18, 2014 |