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SSM3K336R - Silicon N-Channel MOSFET

Key Features

  • (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2025-02-20 Rev.5.0 SSM3K336R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate.

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Datasheet Details

Part number SSM3K336R
Manufacturer Toshiba
File Size 362.06 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K336R Datasheet

Full PDF Text Transcription for SSM3K336R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSM3K336R. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-r...

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rs 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2025-02-20 Rev.5.0 SSM3K336R 4.

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