SSM6J502NU - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM6J502NU
Manufacturer	Toshiba Semiconductor
File Size	429.56 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J502NU-ToshibaSemiconductor.pdf

(1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

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Published: Sep 14, 2014 |