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SSM6J502NU Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

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Datasheet Details

Part number SSM6J502NU
Manufacturer Toshiba
File Size 429.56 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J502NU Datasheet

Overview

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1.

Applications • Power Management Switches 2.

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

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