SSM6J53FE Description
SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5 V drive Suitable for high-density mounting due to pact package Unit : mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V).