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SSM6J53FE - High Current Switching Applications

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  • products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of.

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Part number SSM6J53FE
Manufacturer Toshiba Semiconductor
File Size 224.36 KB
Description High Current Switching Applications
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SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • • 1.5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.8 -3.6 500 150 −55~150 Unit V V A mW °C °C 1 2 3 6 5 4 0.12±0.05 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range 0.55±0.
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