Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
○ High-Speed Switching Applications ○ Power Management Switch Applications
- -
- 1.5 V drive Suitable for high-density mounting due to pact package Unit : mm
1.6±0.05 1.2±0.05 0.2±0.05 0.5
1.6±0.05
1.0±0.05
Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V)
Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.8 -3.6 500 150
- 55~150 Unit V V A mW °C °C
1 2 3
6 5 4...