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SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
• • • 1.5 V drive Suitable for high-density mounting due to compact package Unit : mm
1.6±0.05 1.2±0.05 0.2±0.05 0.5
1.6±0.05
1.0±0.05
Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V)
Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.8 -3.6 500 150 −55~150 Unit V V A mW °C °C
1 2 3
6 5 4 0.12±0.05
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
0.55±0.
SSM6J53FE Datasheet
