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SSM6J503NU Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

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Datasheet Details

Part number SSM6J503NU
Manufacturer Toshiba
File Size 475.72 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J503NU Datasheet

Overview

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J503NU 1.

Applications • Power Management Switches 2.

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J503NU 1,2,5,6: Drain 3: Gate 4: Source ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2025-05-09 Rev.1.0 SSM6J503NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta.

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