Datasheet4U Logo Datasheet4U.com

SSM6P36FE - P-Channel MOSFET

📥 Download Datasheet

Datasheet preview – SSM6P36FE

📁 Similar Datasheet

  • SSM6P35AFE - Silicon P-Channel MOSFET (Toshiba)
  • SSM6P35AFU - Silicon P-Channel MOSFET (Toshiba)
  • SSM6P56FE - P-Channel MOSFET (Toshiba)
  • SSM6P69NU - P-Channel MOSFET (Toshiba)
  • SSM6P816R - P-Channel MOSFET (Toshiba)
  • SSM60T03GH - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GJ - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GP - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GS - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03H - N-Channel Enhancement Mode Power MOSFET (Silicon Standard)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE ○ Power Management Switches • 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron = 1.31 Ω (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 0.12±0.05 Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS -20 V VGSS ±8 V ID -330 mA IDP -660 PD (Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
Published: |