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TPCP8202
TOSHIBA Field Effect Transistor
www.DataSheet4U.com Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications Motor Drive Applications DC/DC Converters
• • • • • Lead (Pb)-free Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA)
0.475
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.65 2.9±0.1
B A S
0.05 M B
0.8±0.05 0.025
S
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 ±12 5.
TPCP8202 Datasheet
