Datasheet Summary
MOSFETs Silicon N-Channel MOS (U-MOS)
1. Applications
- Mobile Equipments
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain
PS-8
4....