Datasheet Summary
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
- Motor Drivers
- Mobile Equipment
2. Features
(1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.)(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
PS-8
1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1
©2015 Toshiba Corporation
Start of mercial production
2010-03
2015-10-21 Rev.5.0
4....