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TPCP8202 - MOSFET

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TPCP8202 TOSHIBA Field Effect Transistor www.DataSheet4U.com Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications DC/DC Converters • • • • • Lead (Pb)-free Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA) 0.475 1 4 Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.65 2.9±0.1 B A S 0.05 M B 0.8±0.05 0.025 S Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 ±12 5.
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