Datasheet Summary
TOSHIBA Field Effect Transistor
.. Silicon N-Channel MOS Type (U-MOSIV)
Portable Equipment Applications Motor Drive Applications DC/DC Converters
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- Lead (Pb)-free Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA)
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.65 2.9±0.1
0.05 M B
0.8±0.05...