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TPCP8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCP8204
Portable Equipment Applications Motor Drive Applications
• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
(VGS=10V) • High forward transfer admittance:|Yfs| = 8 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
0.475 1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.