Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
Portable Equipment Applications Motor Drive Applications
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
（VGS=10V）
- High forward transfer admittance:|Yfs| = 8 S (typ.)
- Low leakage current: IDSS = 10 μA (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID =...