Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
Portable Equipment Applications Motor Drive Applications DC/DC Converters
- Lead (Pb)-free
- Small footprint due to small and thin package
- Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 8.6 S (typ.)
- Low leakage current: IDSS = 10 μA (max)(VDS = 40 V)
- Enhancement model: Vth = 1.3 to 2.5V
(VDS = 10 V, ID = 1...