Datasheet Summary
.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
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- Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 mΩ (typ.) High forward transfer admittance :|Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 10 µA (VDS = 30 V) Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1
1 4
0.65 2.9±0.1
0.05 M B
0.8±0.05
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12
+0.13
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ)...