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TPCP8205-H - Silicon N-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ. )(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8205-H PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2010-03 2015-10-21 Rev.5.0 TPCP8205-H 4.

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Datasheet Details

Part number TPCP8205-H
Manufacturer Toshiba
File Size 261.16 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCP8205-H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCP8205-H 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.)(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8205-H PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2010-03 2015-10-21 Rev.5.0 TPCP8205-H 4.