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TPCP8206 - MOSFETs

Key Features

  • (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pu.

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TPCP8206 MOSFETs Silicon N-Channel MOS (U-MOS) TPCP8206 1. Applications • Mobile Equipments 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain PS-8 4.