TC2997B Description
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
TC2997B Key Features
- 20W Typical Power at 1.9 GHz
- 12 dB Typical Linear Power Gain at 1.9 GHz
- High Linearity: IP3 = 52 dBm Typical
- High Power Added Efficiency: Nominal PAE of 40 %
- Suitable for High Reliability Application
- Lg = 1 µm, Wg = 50 mm
- 100 % DC and RF Tested
- Flange Ceramic Package