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TPH3205ESBET Datasheet - Transphorm

650V GaN FET

TPH3205ESBET Features

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoH

TPH3205ESBET General Description

The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower .

TPH3205ESBET Datasheet (1.31 MB)

Preview of TPH3205ESBET PDF

Datasheet Details

Part number:

TPH3205ESBET

Manufacturer:

Transphorm

File Size:

1.31 MB

Description:

650v gan fet.

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TAGS

TPH3205ESBET 650V GaN FET Transphorm

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