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TPH3205ESBET Datasheet 650V GaN FET

Manufacturer: Transphorm

General Description

The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Overview

PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab).

Key Features

  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoH.