Datasheet Details
| Part number | TPH3207WS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.29 MB |
| Description | 650V GaN FET |
| Datasheet |
 TPH3207WS Datasheet
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| Part number | TPH3207WS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.29 MB |
| Description | 650V GaN FET |
| Datasheet |
TPH3207WS Datasheet
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The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
650V GaN FET in TO-247 (source tab) TPH3207WS Not recommended for new designs—see.
| Part Number | Description |
|---|---|
| TPH3202L | 600V GaN FET |
| TPH3202P | 600V GaN FET |
| TPH3205ESBET | 650V GaN FET |
| TPH3205WS | 600V Cascode GaN FET |
| TPH3205WSB | 650V GaN FET |
| TPH3206L | 650V GaN FET |
| TPH3206PD | 600V GaN FET |
| TPH3206PS | 600V Cascode GaN FET |
| TPH3206PSB | 650V GaN FET |
| TPH3208L | 650V GaN FET |