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AGR09070EF Datasheet Lateral MOSFET

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR09070EF
Manufacturer TriQuint Semiconductor
File Size 383.52 KB
Description Lateral MOSFET
Datasheet download datasheet AGR09070EF Datasheet

Overview

AGR09070EF Introduction 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications.

This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability.

Key Features

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  • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 21 W):.
  • Modula.

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