AGR09030E Description
AGR09030E 30 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier...
AGR09030E Key Features
- Output power (POUT): 7 W
- Power gain: 21 dB
- Efficiency: 27%
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: -45 dBc) (1.98 MHz offset: -60 dBc)
- Input return loss: 10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated
- Stresses in excess of the