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AGR09180EF Datasheet Lateral MOSFET

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR09180EF
Manufacturer TriQuint Semiconductor
File Size 447.12 KB
Description Lateral MOSFET
Download AGR09180EF Download (PDF)

Overview

AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.

This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.

Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.

Key Features

  • Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8.
  • 13:.
  • Output power (POUT): 38 W.
  • Power gain: 18.25 dB.
  • Efficiency: 27%.
  • Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:.
  • 45 dBc) (1.98 MHz offset:.
  • 60 dBc).
  • Input return loss: 10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry.

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