AGR09180EF Description
AGR09180EF 180 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and...
AGR09180EF Key Features
- Output power (POUT): 38 W
- Power gain: 18.25 dB
- Efficiency: 27%
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: -45 dBc) (1.98 MHz offset: -60 dBc)
- Input return loss: 10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated
- Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must