Datasheet Details
| Part number | AGR09090EF |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 527.54 KB |
| Description | Lateral MOSFET |
| Download | AGR09090EF Download (PDF) |
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| Part number | AGR09090EF |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 527.54 KB |
| Description | Lateral MOSFET |
| Download | AGR09090EF Download (PDF) |
|
|
|
AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability.
Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's wireless base station RF power amplifier applications.
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