AGR09090EF Overview
AGR09090EF 90 W, 865 MHz 960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile munication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS...
AGR09090EF Key Features
- Modulation spectrum: @ ±400 kHz = -60 dBc. @ ±600 kHz = -72 dBc
- Error vector magnitude (EVM) = 2.3%. .. Typical performance over entire GSM band
- P1dB: 105 W typical
- Power gain: @ P1dB = 17.8 dB
- Efficiency @ P1dB = 60% typical
- Return loss: -10 dB
- Stresses in excess of the