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AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit
The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 70 W, it is ideally suited for today's wireless base station RF power amplifier applications.
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AGR09070EF Datasheet
