AGR09130E Overview
t Copy Only AGR09130E 130 W, 921 MHz 960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier...
AGR09130E Key Features
- Output power (POUT): 50 W
- Power gain: 17.8 dB
- Modulation spectrum: @ ±400 kHz = -60 dBc. @ ±600 kHz = -72 dBc
- Error vector magnitude (EVM) = 1.8%
- Return loss: -10 dB. High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and lineari
- Stresses in excess of the