Datasheet Details
| Part number | AGR09130E |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 477.75 KB |
| Description | Lateral MOSFET |
| Download | AGR09130E Download (PDF) |
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| Part number | AGR09130E |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 477.75 KB |
| Description | Lateral MOSFET |
| Download | AGR09130E Download (PDF) |
|
|
|
t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, and reliability.
Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 130 W, it is ideally suited for today's RF power amplifier applications.
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