AGR09085E Overview
AGR09085E 85 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless...
AGR09085E Key Features
- Output power (POUT): 20 W
- Power gain: 18 dB
- Efficiency: 28%
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: -45 dBc). 1.98 MHz offset: -60 dBc)
- Return loss: 10 dB. High-reliability, gold-metalization process. Best-in-class thermal resistance. Internally matched. H
- Stresses in excess of the