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AGR09085E - Lateral MOSFET

Datasheet Summary

Features

  • Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8.
  • 13:.
  • Output power (POUT): 20 W.
  • Power gain: 18 dB.
  • Efficiency: 28%.
  • Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:.
  • 45 dBc). 1.98 MHz offset:.
  • 60 dBc).
  • Return loss: 10 dB. High-reliability, gold-metalization process. Best-in-class thermal resistance. Internally matched. High gain, efficiency, and lineari.

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Datasheet Details

Part number AGR09085E
Manufacturer TriQuint Semiconductor
File Size 365.43 KB
Description Lateral MOSFET
Datasheet download datasheet AGR09085E Datasheet
Additional preview pages of the AGR09085E datasheet.

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Full PDF Text Transcription

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AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class thermal resistance.
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