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AGR19030EF - Transistor

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TriQuint Semiconductor

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AGR19030EF Transistor by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – AGR19030EF

Datasheet Details

Part number	AGR19030EF
Manufacturer	TriQuint Semiconductor
File Size	365.89 KB
Description	Transistor
Datasheet	AGR19030EF Datasheet
Additional preview pages of the AGR19030EF datasheet.

Product details

Features

Typical performance over entire GSM band:.
P1dB: 30 W typical.
Continuous wave (CW) power gain: @ P1dB = 15 dB.
CW efficiency @ P1dB = 55% typical.
Return loss:.
12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Figure 1. AGR19030EF (flanged) Package Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withsta.

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Published: Oct 5, 2009 |