AGR21125E Description
AGR21125E 125 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Thermal Characteristics Parameter , Junction to...
AGR21125E Key Features
- 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
- 10 MHz and .. F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF
- Output power: 28 W
- Power gain: 14 dB
- Efficiency: 27%
- IM3: -34.5 dBc
- ACPR: -38 dBc
- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift ove
- Stresses in excess of the