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AGR26180EF Datasheet Transistor

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR26180EF
Manufacturer TriQuint Semiconductor
File Size 391.69 KB
Description Transistor
Datasheet download datasheet AGR26180EF Datasheet

Overview

Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications.

Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2.

Key Features

  • Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF.
  • :.
  • Output power: 27 W. www. DataSheet4U. com.
  • Power gain: 12.5 dB.
  • Efficiency: 20%.
  • ACPR:.
  • 33 dBc.
  • ACLR1:.
  • 35 dBc.
  • Return loss:.
  • 12 dB. Typical pulsed P1dB, 6 µs pulse at 10% duty: 185 W.

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