T1G6001528-Q3 Key Features
- Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low therm
- Part: T1G6001528-Q3
- Manufacturer: TriQuint Semiconductor
- Size: 662.56 KB
Related TriQuint Semiconductor Datasheets
| Part Number | Description |
|---|---|
| T1G6001528-Q3 | GaN RF Power Transistor |
| T1G6001032-SM | GaN RF Power Transistor |
| T1G6000528-Q3 | GaN RF Power Transistor |
| T1G6003028-FS | DC-6GHz GaN RF Power Transistor |
| T1G4005528-FS | GaN RF Power Transistor |
T1G6001528-Q3 Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which.