• Part: T1G6001528-Q3
  • Manufacturer: TriQuint Semiconductor
  • Size: 662.56 KB
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T1G6001528-Q3 Description

The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which.

T1G6001528-Q3 Key Features

  • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low therm