T1G6001528-Q3
T1G6001528-Q3 is GaN RF Power Transistor manufactured by TriQuint Semiconductor.
- 6 GHz 18 W GaN RF Power Transistor Applications
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- General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics
Product Features
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- Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package
Functional Block Diagram
.DataSheet.net/
General Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which...
