Datasheet Details
| Part number | T1G6001528-Q3 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 662.56 KB |
| Description | GaN RF Power Transistor |
| Datasheet | T1G6001528-Q3_TriQuintSemiconductor.pdf |
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Overview: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test.
| Part number | T1G6001528-Q3 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 662.56 KB |
| Description | GaN RF Power Transistor |
| Datasheet | T1G6001528-Q3_TriQuintSemiconductor.pdf |
|
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The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25 μm process, which
| Part Number | Description |
|---|---|
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