• Part: T1G6000528-Q3
  • Manufacturer: TriQuint Semiconductor
  • Size: 1.62 MB
Download T1G6000528-Q3 Datasheet PDF
T1G6000528-Q3 page 2
Page 2
T1G6000528-Q3 page 3
Page 3

T1G6000528-Q3 Description

5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo .DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which.

T1G6000528-Q3 Key Features

  • Frequency: DC to 6 GHz
  • Linear Gain: >10 dB at 6 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): >7 W at 6 GHz
  • Lead-free and RoHS pliant
  • Low thermal resistance package
  • http://..co.kr/