• Part: T1G6000528-Q3
  • Description: GaN RF Power Transistor
  • Category: Transistor
  • Manufacturer: TriQuint Semiconductor
  • Size: 1.62 MB
Download T1G6000528-Q3 Datasheet PDF
TriQuint Semiconductor
T1G6000528-Q3
T1G6000528-Q3 is GaN RF Power Transistor manufactured by TriQuint Semiconductor.
7W, 28V, DC - 6 GHz, GaN RF Power Transistor Applications - Wideband and narrowband defense and mercial munication systems - - General Purpose RF Power - - Jammers - - Radar - - Professional radio systems - - WiMAX - - Wideband amplifiers - - Test instrumentation - - Cellular infrastructure Available Package Product Features - Frequency: DC to 6 GHz - Linear Gain: >10 dB at 6 GHz - Operating Voltage: 28 V - Output Power (P3dB): >7 W at 6 GHz - Lead-free and RoHS pliant - Low thermal resistance package Package Information Package Type Q3 Description 5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo .DataSheet.net/ General Description The TriQuint...