Datasheet Details
| Part number | T1G6000528-Q3 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.62 MB |
| Description | GaN RF Power Transistor |
| Datasheet | T1G6000528-Q3_TriQuintSemiconductor.pdf |
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Overview: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and mercial munication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems ––.
| Part number | T1G6000528-Q3 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.62 MB |
| Description | GaN RF Power Transistor |
| Datasheet | T1G6000528-Q3_TriQuintSemiconductor.pdf |
|
|
|
5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo .DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25 µm production process, which
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