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T1G4005528-FS Datasheet Gan Rf Power Transistor

Manufacturer: TriQuint Semiconductor

Overview: T1G4005528-FS Applications • Military radar • Civilian radar • Professional and military radio munications • Test instrumentation • Avionics • Wideband or narrowband amplifiers 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor .DataSheet.net/ 2 5.461 10.

General Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz.

The device is constructed with TriQuint’s proven 0.25 µm production process, which

Key Features

  • Frequency: DC to 3.5 GHz.
  • Linear Gain: >15 dB at 3.5 GHz.
  • Operating Voltage: 28 V.
  • Output Power (P3dB): 55 W at 3.5 GHz.
  • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 +.000 3.505 -.203 .508 General.

T1G4005528-FS Distributor