Datasheet4U Logo Datasheet4U.com

T1G4005528-FS - GaN RF Power Transistor

Datasheet Summary

Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz.

Features

  • Frequency: DC to 3.5 GHz.
  • Linear Gain: >15 dB at 3.5 GHz.
  • Operating Voltage: 28 V.
  • Output Power (P3dB): 55 W at 3.5 GHz.
  • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 +.000 3.505 -.203 .508 General.

📥 Download Datasheet

Datasheet preview – T1G4005528-FS

Datasheet Details

Part number T1G4005528-FS
Manufacturer TriQuint Semiconductor
File Size 2.38 MB
Description GaN RF Power Transistor
Datasheet download datasheet T1G4005528-FS Datasheet
Additional preview pages of the T1G4005528-FS datasheet.

📁 Similar Datasheet

Other Datasheets by TriQuint Semiconductor

Full PDF Text Transcription

Click to expand full text
T1G4005528-FS Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor www.DataSheet.net/ 2 5.461 10.992 Product Features • Frequency: DC to 3.5 GHz • Linear Gain: >15 dB at 3.5 GHz • Operating Voltage: 28 V • Output Power (P3dB): 55 W at 3.5 GHz • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 +.000 3.505 -.203 .508 General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.
Published: |