Datasheet4U Logo Datasheet4U.com

T1G4005528-FS - GaN RF Power Transistor

General Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz.

Key Features

  • Frequency: DC to 3.5 GHz.
  • Linear Gain: >15 dB at 3.5 GHz.
  • Operating Voltage: 28 V.
  • Output Power (P3dB): 55 W at 3.5 GHz.
  • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 +.000 3.505 -.203 .508 General.

📥 Download Datasheet

Datasheet Details

Part number T1G4005528-FS
Manufacturer TriQuint Semiconductor
File Size 2.38 MB
Description GaN RF Power Transistor
Datasheet download datasheet T1G4005528-FS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by TriQuint Semiconductor

Part Number Description
T1G6000528-Q3 GaN RF Power Transistor
T1G6001032-SM GaN RF Power Transistor
T1G6001528-Q3 18 W GaN RF Power Transistor
T1G6001528-Q3 GaN RF Power Transistor
T1G6003028-FS DC-6GHz GaN RF Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
T1G4005528-FS Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor www.DataSheet.net/ 2 5.461 10.992 Product Features • Frequency: DC to 3.5 GHz • Linear Gain: >15 dB at 3.5 GHz • Operating Voltage: 28 V • Output Power (P3dB): 55 W at 3.5 GHz • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 +.000 3.505 -.203 .508 General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.