T1G6003028-FS
T1G6003028-FS is DC-6GHz GaN RF Power Transistor manufactured by TriQuint Semiconductor.
30W, 28V, DC
- 6 GHz, GaN RF Power Transistor Applications
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Military radar Civilian radar Professional and military radio munications Test instrumentation Wideband or narrowband amplifiers Jammers
Product Features
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- Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package
Functional Block Diagram
.DataSheet.net/
General Description
The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which Features advanced field plate techniques to optimize...
