Datasheet4U Logo Datasheet4U.com

T1G6003028-FS Datasheet DC-6ghz Gan Rf Power Transistor

Manufacturer: TriQuint Semiconductor

Overview: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio munications Test instrumentation Wideband or narrowband amplifiers.

General Description

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

The device is constructed with TriQuint’s proven 0.25 µm process, which

Key Features

  • Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 2 www. DataSheet. net/ General.

T1G6003028-FS Distributor