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T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications
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Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers
Product Features
• • • • • Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package
Functional Block Diagram
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General Description
The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
T1G6003028-FS Datasheet
