Datasheet4U Logo Datasheet4U.com

T1G6001032-SM - GaN RF Power Transistor

Datasheet Summary

Description

The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

Features

  • Frequency: DC to 6 GHz.
  • Output Power (P3dB): 10 W Peak at 3.1 GHz.
  • Linear Gain: >17 dB at 3.1 GHz.
  • Operating Voltage: 32 V.
  • Low thermal resistance package Functional Block Diagram General.

📥 Download Datasheet

Datasheet preview – T1G6001032-SM

Datasheet Details

Part number T1G6001032-SM
Manufacturer TriQuint Semiconductor
File Size 1.09 MB
Description GaN RF Power Transistor
Datasheet download datasheet T1G6001032-SM Datasheet
Additional preview pages of the T1G6001032-SM datasheet.

📁 Similar Datasheet

Other Datasheets by TriQuint Semiconductor

Full PDF Text Transcription

Click to expand full text
T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 6 GHz • Output Power (P3dB): 10 W Peak at 3.1 GHz • Linear Gain: >17 dB at 3.1 GHz • Operating Voltage: 32 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Published: |