T1G6003028-FS Datasheet DC-6GHz GaN RF Power Transistor

Manufacturer: TriQuint Semiconductor

T1G6003028-FS dc-6ghz gan rf power transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	T1G6003028-FS
Manufacturer	TriQuint Semiconductor
File Size	1.31 MB
Description	DC-6GHz GaN RF Power Transistor
Datasheet	T1G6003028-FS Datasheet

General Description

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

The device is constructed with TriQuint’s proven 0.25 µm process, which

Overview

T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers.

Key Features

Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 2 www. DataSheet. net/ General.

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