2-18 GHz 10 Watt GaN Amplifier
Absolute Maximum Ratings
Drain to Gate Voltage, Vd - Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
40 V 2/
-8 to 0 V
1.3 A 1/ 2/
-4 to 11 mA
35 dBm 2/
-40 to 150 °C
1/ Continuous operation at currents above 1.0 Amp will
reduce lifetime independent of junction temperature.
Contact TriQuint for more information.
2/ At certain frequencies, Id can exceed 1.0 A for Pin ≥ 33
dBm and Vd ≥ 30V.
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Id_drive (Under RF
1/ Continuous operation at currents above 1.0 Amp will reduce
lifetime independent of junction temperature. Contact TriQuint for
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
Test conditions unless otherwise noted: 25ºC, Vd = 30 V, Idq = 500 mA, Vg = -3.4 V Typical.
Operational Frequency Range
Small signal gain
Input Return Loss
Output Return Loss
Output Power @ Saturation
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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