900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






TriQuint Semiconductor

TGA2573 Datasheet Preview

TGA2573 Datasheet

2-18 GHz 10 Watt GaN Amplifier

No Preview Available !

TGA2573
2-18 GHz 10 Watt GaN Amplifier
Applications
Military Radar
Communications
Electronic warfare
Electronic counter measures
Test Equipment
Product Features
Frequency Range: 2 – 18 GHz
Psat: 40.0 dBm at Vd=30 V
PAE: 25% typical
Small Signal Gain: 9 dB
Return Loss: 15 dB
Bias: Vd = 30 V, Idq = 500 mA,
Vg = -3.4 V typical
Technology: 0.25 µm GaN on SiC
Dimensions: 2.55 x 5.54 x 0.1 mm
General Description
TriQuint’s TGA2573 is a wideband, high power GaN
HEMT amplifier fabricated on TriQuint’s production
0.25um GaN on SiC process. Operating from 2 to 18
GHz, it achieves 40 dBm saturated output power, 25%
PAE and 9 dB small signal gain at a drain bias of 30
volts.
Fully matched to 50 ohms and with integrated DC
blocking caps on both RF ports, the TGA2573 is ideally
suited to support both commercial and defense related
applications.
The TGA2573 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Lead-free and RoHS compliant
Functional Block Diagram
Vg
4
RF
In 1
TGA2573
2
RF
3 Out
Vd
Bond Pad Configuration
Bond Pad #
1
2
3
4
Symbol
RF In
Vd
RF Out
Vg
Ordering Information
Part No.
TGA2573
ECCN
XI(c)
Description
GaN on SiC Die
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®




TriQuint Semiconductor

TGA2573 Datasheet Preview

TGA2573 Datasheet

2-18 GHz 10 Watt GaN Amplifier

No Preview Available !

TGA2573
2-18 GHz 10 Watt GaN Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd - Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50,T = 25ºC
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Rating
40 V 2/
-8 to 0 V
80 V
1.3 A 1/ 2/
-4 to 11 mA
30 W
35 dBm 2/
250 °C
320 °C
-40 to 150 °C
1/ Continuous operation at currents above 1.0 Amp will
reduce lifetime independent of junction temperature.
Contact TriQuint for more information.
2/ At certain frequencies, Id can exceed 1.0 A for Pin 33
dBm and Vd 30V.
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Min
Vd
Idq
Id_drive (Under RF
Drive)
Vg
Typical
30
500
650-1100
1/
-3.4
Max
Unit
s
V
mA
mA
V
1/ Continuous operation at currents above 1.0 Amp will reduce
lifetime independent of junction temperature. Contact TriQuint for
more information.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 30 V, Idq = 500 mA, Vg = -3.4 V Typical.
Parameter
Min Typical
Operational Frequency Range
2
Small signal gain
9
Input Return Loss
15
Output Return Loss
15
Output Power @ Saturation
40.0
Max
18
Units
GHz
dB
dB
dB
dBm
The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
Preliminary Data Sheet: Rev. A 6/23/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 16 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®


Part Number TGA2573
Description 2-18 GHz 10 Watt GaN Amplifier
Maker TriQuint Semiconductor
Total Page 16 Pages
PDF Download

TGA2573 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TGA2573 2-18 GHz 10 Watt GaN Amplifier
TriQuint Semiconductor
2 TGA2575 Ka-Band 4 Watt Power Amplifier
TriQuint Semiconductor
3 TGA2575-TS Ka-Band 3 Watt Power Amplifier
TriQuint Semiconductor
4 TGA2576-2-FL GaN Power Amplifier
TriQuint Semiconductor
5 TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier
TriQuint Semiconductor
6 TGA2576-FS GaN Power Amplifier
TriQuint Semiconductor
7 TGA2578 30W Power Amplifier
TriQuint Semiconductor
8 TGA2578-CP 30W GaN Power Amplifier
TriQuint Semiconductor
9 TGA2579-2-FL 20W Ku-Band GaN Power Amplifier
TriQuint Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy