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TGF2023-01 Datasheet - TriQuint Semiconductor

6 Watt Discrete Power GaN on SiC HEMT

TGF2023-01 Features

* Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66

TGF2023-01 Datasheet (0.96 MB)

Preview of TGF2023-01 PDF

Datasheet Details

Part number:

TGF2023-01

Manufacturer:

TriQuint Semiconductor

File Size:

0.96 MB

Description:

6 watt discrete power gan on sic hemt.

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TAGS

TGF2023-01 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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