TGF2023-01 Datasheet 6 Watt Discrete Power GaN on SiC HEMT

Manufacturer: TriQuint Semiconductor

Datasheet Details

Part number	TGF2023-01
Manufacturer	TriQuint Semiconductor
File Size	0.96 MB
Description	6 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-01 Datasheet

The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process.

This process

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key.

Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical Primary.

Part Number	Description
TGF2023-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01	SiC HEMT
TGF2023-2-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20	100 Watt Discrete Power GaN on SiC HEMT
TGF2021-01	DC-12 GHz Discrete Power pHEMT
TGF2021-02	DC - 12 GHz Discrete power pHEMT