TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

The TGF2023-01 by TriQuint Semiconductor is a 6 Watt Discrete Power GaN on SiC HEMT. Below is the official datasheet preview.

Datasheet Details

Part number	TGF2023-01
Manufacturer	TriQuint Semiconductor
File Size	0.96 MB
Description	6 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-01_TriQuintSemiconductor.pdf
Additional preview pages of the TGF2023-01 datasheet.

The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz.

Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical Primary.

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Published: Jul 1, 2012 |